Oct 18, 2004 - Experimentally, pulsed Raman laser emission at 1675 nm with 25 MHz repetition rate is demonstrated using a silicon waveguide as the gain.
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 E. Hecht, Optics, 4th ed. (Pearson Education, Essex, 2002). In our model, the reflection of the anti-Stokes waves at the interface between the Si waveguide ...
paper, we report design, fabrication, and characterization of tunable silicon ring resonators for Raman laser and amplifier applications. By employing a tunable ...
Mar 10, 2014 - the thermal conductivity is obtained through Fourier's law. (Îº = Pabs/ T). Several electrical and optical techniques have been developed to ...
Abstract: We demonstrate, for the first time, a mid infrared silicon Raman .... Stokes photons which sustains the material vibrations in the medium to efficiently ...
Index TermsâSilicon Raman lasers, Mid-IR silicon lasers, two-photon ... SSRLs, although not as broadly tunable as OPOs, can be tuned via the pump.
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Jun 1, 2004 - (d) toroid diameters. 0146-9592/04/111224-03$15.00/0 ... The Ra- man gain coefficient (silica 0.66 3 10213 mW at. 1.55 mm) is given by gR. Parameter C G ... The modes are spaced with the free spectral range of the cavity.
Jul 14, 2010 - The design, construction and performance of a Raman laser system to be used for ..... into a magnetic trap comprising a pair of anti-Helmholtz coils ...... and spans the width of our cloud in the other, cutting through a 1D lattice.
energy than the input (pump) photons. ... pumped Raman lasers that generate ... Figure 1 processes that occur in a Raman laser. a, stimulated stokes Raman ...
This Equation is simply Beer's Law. Now a Raman band .... transported being bound (as the sixth ligand) to the heme iron. ... aqueous solution at high dilution without interference of the modes of .... They have reported that a coupling strength for
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In chalcogenide glasses shifting the excitation wavelength to 840 nm (below the bandgap) allows one to ... investigations of As2S3 bulk glasses and films depending on composition and processing conditions. Another application are the ..... In the bor
Communicated by Melvin Calvin, August 26, 1974. ABSTRACT. Bacteriorhodopsin is a rhodopsin-like protein found in the cell membrane of Halobacterium.
Nov 14, 2005 - Abstract: A novel laser that utilizes a silicon waveguide bonded to. AlGaInAs quantum wells is demonstrated. This wafer scale fabrication.
guarfz window--- press-. Time Ips). Fig. 3: Ca3 Expnimcntd configuration for the absokute measurement of acoustic puke amplitudes an a nanosecond time.
With this new laser etching process, the construction of high ... utilizing conventional machining and electroforming techniques becomes extremely difficult,.
May 20, 2016 - the first quantum cascade lasers on silicon emitting 4.8 Î¼m light, integrated ... chemical bond spectroscopy of the earth's atmosphere and plan-.
width at half maximum pulse duration, was used for laser nanostructuring.6 The ... tron EPM 1000 analyzer and a J25LP-MUV pyroelectric de- tector. The laser ...
studied and the ablation rate measured as a function of laser energy density and wavelength. A ... als on a semiconductor as well as with laser annealing,.
We present a theoretical model capable of describing the evolution of pulse parameters when stimulated Ra- man scattering under continuous-wave pumping is ...
Stimulated Raman Scattering (SRS) coefficient of bulk silicon, and .... depletion, a detailed theory describing the interaction of Stokes and anti-Stokes waves via.
In addition to this, the need for an external optical pump poses a question regarding the place of Silicon Raman lasers at telecom wavelengths, where the III-V ...
A continuous-wave Raman silicon laser Haisheng Rong, Richard Jones, ..
- Intel Corporation
Ultrafast Terahertz nanoelectronics Lab Jae-seok Kim 1
Contents 1. Abstract 2. Background I. Raman scattering II. Two-photon absorption(TPA) III. Free carrier absorption(FCA)
Background I. Raman Scattering (or Raman effect) Inelastic scattering of a photon A small fraction of the scattered light(≈1/𝟏𝟎𝟕 ) frequency different from incident photon : usually lower than
Rayleigh scattering − When light is scattered from an atom or molecule, most photons are elastically scattered − Scattered photon = incident photon(same E & wavelength)
Background II. Two-photon absorption(TPA) Simultaneous absorption of two photons of identical or different frequencies Nonlinear optical process TPA « OPA (One-photon absorption) Linear absorption ∝ 𝐼𝑙𝑖𝑔𝑡 2
Laser Design Laser cavity Low-loss SOI rib waveguide Coating the facets of Si waveguide with multilayer dielectric films 𝑅𝑓 : 71%(1,686nm), 24%(1,550nm) 𝑅𝑏 : 90%(1,686nm Raman & 1,550nm Pump) For minimizing optical power to achieve the lasing threshold small cross-section Not so small as to cause high transmission loss
S-shaped waveguide − Total length : 4.8cm, Bend radius : 400um Transmission loss : 0.35 dB/cm
p-i-n diode structure − To reduce nonlinear optical loss due to TPA-induced FCA 6
Laser Design Schematic set-up
The coupling loss between the lensed fiber and the waveguide : 4dB The insertion loss of the de-mux and long-wavelength pass filter : 0.6dB Cavity enhancement effect of the pump power lower the lasing threshold When the pump laser is tuned to the resonance of the cavity : effective mean internal power (𝐼𝑒𝑓𝑓 ) Power enhancement factor M=𝐼𝑒𝑓𝑓 /𝐼𝑖 : 2.2 At high power, α increases owing to TPA-induced nonlinear absorption, M reduces accordingly 7
Experimental results 400mW
Raman laser frequency is 15.6THz lower than that of the pump laser Slope efficiency(single side output) − 25V reverse bias : 4.3% / 5V : 2%
Nonlinear loss caused by TPA-induced FCA − Reduce the net gain at higher pump powers − Cavity enhancement factor M reduces lower the effective pump power in the cavity 8
Experimental results Confocal scanning Fabry-Perot spectrum analyser with free spectral range(FSR) of 8GHz(4.8cm cavity) & finesse of 100 Pump power of 400mW & Reverse bias of 25V Single-mode output − No other cavity modes with expected mode spacing of 0.9GHz
80MHZ linewidth by the resolution of the spectrum analyser 1,548~1,558nm pump laser in 2-nm steps Side-mode suppression of over 55dB Center wavelength corresponds to appropriate Stokes shift Small fluctuation is due to insertion loss of demux, long-wavelength pass filter, and gain of erbium-doped fiber amplifier 9
Conclusion & Summary • First demonstration of c.w. Raman lasing in silicon • Improved by optimizing cavity mirror & length design • Reduced threshold power by using smaller cross-sectional dimension & larger cavity enhancement • Improved waveguide coupling efficiency by adding a mode converter • Optimization of p-i-n diode design reduce the effective carrier lifetime to below 1ns • Multilayer coating of cavity mirrors is replaced with waveguide Bragg reflectors, ring or microdisk resonator architectures