A Design of BJT-based ESD Protection Device

However, because of the nature of avalanche-injection conductivity modulation, both structures provide low holding voltages when implemented in high v...

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can be simulated by different ESD test models categorized by its origins, upon which on-chip ESD protection circuits are tested and rated. 2.1 HBM Model. Human body model (HBM) [7, 8] simulates ESD events that occur when a charged human body contacts

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IEICE TRANS. ELECTRON., VOL.E92–C, NO.3 MARCH 2009. 341. PAPER. Impedance-Isolation Technique for ESD Protection Design in RF. Integrated Circuits. ∗. Ming-Dou KER. †a). , Member ... implemented with large device dimensions and wide drain- ...

robustness and reduce the trigger voltage of the ESD protection device. .... been realized in layout with multiple fingers to reduce the total silicon area.

For this purpose, we construct an equivalent circuit model of input HBM test environments .... rent through the reverse-biased n+-well/p-sub junction, ..... equipment and an input pad, and typical values of 1pF, ..... ing, IEEE EMC Symposium, pp.

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high speed ramps (300 V/1ns) the device under test (T2: the p/n-. /n+ structure shown in Fig. 1b – for which we used commercially available BJTs and shorted the base and emitter junction) exhibited collapse of voltage or second breakdown phenomenon

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